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OMAP3530ECUS 数据表(PDF) 55 Page - Texas Instruments

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部件名 OMAP3530ECUS
功能描述  OMAP3530/25 Applications Processor: OMAP 3 Architecture
PDF  264 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

OMAP3530ECUS 数据表(HTML) 55 Page - Texas Instruments

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OMAP3530/25 Applications Processor
www.ti.com
SPRS507F – FEBRUARY 2008 – REVISED OCTOBER 2009
Table 2-2. Ball Characteristics (CBC Pkg.) (continued)
BALL
BALL
BUFFER
PULLUP
BALL
BALL TOP
PIN NAME
RESET REL.
MODE [4]
TYPE [5]
RESET
RESET REL.
POWER [9]
HYS [10]
STRENG TH
/DOWN
IO CELL [13]
BOTTOM [1]
[2]
[3]
MODE [8]
STATE [6]
STATE [7]
(mA) [11]
TYPE [12]
K18
NA
mmc1_dat2
0
IO
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
gpio_124
4
IO
safe_mode
7
-
N20
NA
mmc1_dat3
0
IO
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
gpio_125
4
IO
safe_mode
7
-
M20
NA
mmc1_dat4
0
IO
L
L
7
vdds_mmc1a
No
8
PU/PD
(4)
LVCMOS
gpio_126
4
IO
safe_mode
7
-
P17
NA
mmc1_dat5
0
IO
L
L
7
vdds_mmc1a
No
8
PU/PD
(4)
LVCMOS
gpio_127
4
IO
safe_mode
7
-
P18
NA
mmc1_dat6
0
IO
L
L
7
vdds_mmc1a
No
8
PU/PD
(4)
LVCMOS
gpio_128
4
IO
safe_mode
7
-
P19
NA
mmc1_dat7
0
IO
L
L
7
vdds_mmc1a
No
8
PU/PD
(4)
LVCMOS
gpio_129
4
IO
safe_mode
7
-
J25
NA
i2c1_scl
0
IOD
H
H
0
vdds
Yes
3
PU100/
Open Drain
PD100
J24
NA
i2c1_sda
0
IOD
H
H
0
vdds
Yes
3
PU100/
Open Drain
PD100
C2
NA
i2c2_scl
0
IOD
H
H
7
vdds
Yes
3
PU100/
Open Drain
PD100
gpio_168
4
IO
4
safe_mode
7
-
4
C1
NA
i2c2_sda
0
IOD
H
H
7
vdds
Yes
3
PU100/
Open Drain
PD100
gpio_183
4
IO
4
safe_mode
7
-
4
AB4
NA
i2c3_scl
0
IOD
H
H
7
vdds
Yes
3
PU100/
Open Drain
PD100
gpio_184
4
IO
4
safe_mode
7
-
4
AC4
NA
i2c3_sda
0
IOD
H
H
7
vdds
Yes
3
PU100/
Open Drain
PD100
gpio_185
4
IO
4
safe_mode
7
-
4
U19
NA
mcbsp1_clkr
0
IO
L
L
7
vdds
Yes
4
(3)
PU100/
LVCMOS
PD100
mcspi4_clk
1
IO
gpio_156
4
IO
safe_mode
7
-
T17
NA
mcbsp1_clkx
0
IO
L
L
7
vdds
Yes
4
(3)
PU100/
LVCMOS
PD100
mcbsp3_clkx
2
IO
gpio_162
4
IO
safe_mode
7
-
T20
NA
mcbsp1_dr
0
I
L
L
7
vdds
Yes
4
(3)
PU100/
LVCMOS
PD100
mcspi4_somi
1
IO
mcbsp3_dr
2
I
gpio_159
4
IO
safe_mode
7
-
(4)
The PU nominal drive strength of this IO cell is equal to 25 mA @ 1.8 V and 41.6 mA @ 3.0 V. The PD nominal drive strength of this IO
cell is equal to 1 mA @ 1.8 V and 1.66 mA @ 3.0 V.
Submit Documentation Feedback
TERMINAL DESCRIPTION
55



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