OMAP3530ECUS datasheet(121/264 Pages) TI1

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3.2 Absolute Maximum Ratings

OMAP3530/25 Applications Processor

www.ti.com

SPRS507F – FEBRUARY 2008 – REVISED OCTOBER 2009

The following table specifies the absolute maximum ratings over the operating junction temperature range

of OMAP commercial and extended temperature devices. Stresses beyond those listed under absolute

maximum ratings may cause permanent damage to the device. These are stress ratings only and

functional operation of the device at these or any other conditions beyond those indicated under

recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for

extended periods may affect device reliability.

Notes:

• Logic functions and parameter values are not assured out of the range specified in the recommended

operating conditions.

• The OMAP3530/25 device adheres to EIA/JESD22–A114, Electrostatic Discharge (ESD) Sensitivity

Testing Human Body Model (HBM). Minimum pass level for HBM is

±1 kV.

Table 3-1. Absolute Maximum Ratings Over Operating Junction Temperature Range

PARAMETER

MIN

MAX

UNIT

vdd_mpu_iva

Supply voltage range for core macros

–0.5

1.6

vdd_core

vdds

Second supply voltage range for 1.8-V I/O macros

–0.5

2.25

vdds_mem

vdds_mmc1

Supply voltage range for MMC1 CMD,

1.8-V mode

–0.5

2.45

CLK and DAT[3:0] and for memory stick

3.0-V mode

-0.5

3.50

I/Os

vdds_vdds_mm

Second supply voltage range for MMC1

1.8-V mode

–0.5

2.45

c1a

DAT[7:4]

3.0-V mode

-0.5

3.50

vdds_dpll_dll

Supply voltage for DLL DPLL

–0.5

2.10

vdds_dpll_per

Supply voltage for Per DPLL

vdds_sram

Supply voltage for SRAM LDOs

–0.5

2.25

vdds_wkup_bg

Supply voltage for wakeup LDO and VDDA (2 LDOs SRAM and BG)

VPAD

Voltage range

MMC1, MS (Balls N28,

Supply voltage range for 1.8-V IOs

–0.54(1)

2.34(1)

at PAD

M27, N27, N26, N25,

Supply voltage range for 3.0-V IOs

–0.45(2)

3.45(2)

P28)

MMC1 (Balls P27, P26,

R27, R25)

I2C1, I2C2, I2C3, I2C4 (Balls K21, J21, AF15, AE15, AF14,

–0.63(1)

2.73(1)

AG14, AD26, AE26)

Crystal (xtalin/xtalout) (Balls AE17, AF17)

–0.5

2.71

Other balls

–0.5

vddsx(3) + 0.5

vdda_dac

Supply voltage range for analog macros

–0.5

2.43

VESD

ESD stress

HBM (human body

vdds_MMC1a,

500

voltage(4)

model)(5)

mmc1_dat[7-4] (CBB pkg only)(6)

Other pins

1000

CDM (charged device

MMC1 signals (CBB pkg only) (6)

300

model)(7)

Other pins

500

IIOI

Current-pulse injection on each I/O pin(8)

200

Iclamp

Clamp current for an input or output

–20

Tstg

Storage temperature range(9)

–65

150

°C

(1)

For a maximum time of 30% time period.

(2)

For a maximum time of 15% time period.

(3)

Depending on ball, vddsx can be vdds_mem or vdds.

(4)

Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.

(5)

JEDEC JESD22–A114F

(6)

Corresponding signals: mmc1_dat0, mmc1_dat1, mmc1_dat2, mmc1_dat3, mmc1_dat4, mmc1_dat5, mmc1_dat6, mmc1_dat7,

mmc1_clk, mmc1_cmd and vdds_mmc1 (CBB pkg only).

(7)

JEDEC JESD22–C101D

(8)

Each device is tested with I/O pin injection of 200 mA with a stress voltage of 1.5 times maximum vdd at room temperature.

(9)

These temperatures extreme do not simulate actual operating conditions but exaggerate any faults that might exist.

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