STM8AF6166 datasheet(56/89 Pages) STMICROELECTRONICS

部件名	STM8AF6166

功能描述	Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V

PDF	89 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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56 / 89 page

Electrical characteristics

STM8AF61xx, STM8AF62xx

56/89

Doc ID 14952 Rev 6

HSE oscillator critical gm formula

The crystal characteristics have to be checked with the following formula:

mcrit

where gmcrit can be calculated with the crystal parameters as follows:

mcrit

HSE

()

2Co

()

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)

CL1 = CL2 = C: Grounded external capacitance

10.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

Table 32.

HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHS

HSI oscillator user

trimming accuracy

Trimmed by the application

for any VDD and TA

conditions

-1(1)

Depending on option byte setting (OPT3 and NOPT3)

-1(1)

-0.5(1)

HSI oscillator accuracy

(factory calibrated)

VDD = 3.0 V ≤ VDD ≤ 5.5 V,

-40 °C

≤ TA ≤ 150 °C

-5

tsu(HSI)

HSI oscillator wakeup time

2(2)

Guaranteed by characterization, not tested in production

µs

STM8AF6166 数据表(PDF) 56 Page - STMicroelectronics

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