STM8AF6166 datasheet(72/89 Pages) STMICROELECTRONICS

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Electrical characteristics

STM8AF61xx, STM8AF62xx

72/89

Doc ID 14952 Rev 6

Electromagnetic interference (EMI)

Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed to determine its performance in terms of electrical sensitivity. For more

details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test

conforms to the JESD22-A114A/A115A standard. For more details, refer to the application

note AN1181.

Table 45.

EMI data

Symbol

Parameter

Conditions

Unit

General conditions

Monitored

frequency band

Max fCPU

(1)

Data based on characterization results, not tested in production.

MHz

SEMI

Peak level

VDD = 5 V,

TA = 25 °C,

LQFP80 package

conforming to SAE J

1752/3

0.1 MHz to 30 MHz

dBµV

30 MHz to 130 MHz

130 MHz to 1 GHz

-1

SAE EMI level

—

2.5

Table 46.

ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Data based on characterization results, not tested in production

Unit

VESD(HBM)

Electrostatic discharge voltage

(Human body model)

TA = 25°C, conforming to

JESD22-A114

4000

VESD(CDM)

Electrostatic discharge voltage

(Charge device model)

TA= 25°C, conforming to

JESD22-C101

500

VESD(MM)

Electrostatic discharge voltage

(Machine model)

TA= 25°C, conforming to

JESD22-A115

200

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