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C2.5X6.3MM-RAD 数据表(PDF) 11 Page - Silicon Laboratories |
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C2.5X6.3MM-RAD 数据表(HTML) 11 Page - Silicon Laboratories |
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11 / 38 page ![]() Si3226/7 Si3208/9 Preliminary Rev. 0.33 11 Figure 1. SPI Timing Diagram Table 10. Switching Characteristics—SPI (VDDA = 3.13 to 5.25 V, TA = 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade, CL =20pF) Parameter Symbol Test Conditions Min Typ Max Unit Cycle Time SCLK tc 62 — — ns Rise Time, SCLK tr — — 25 ns Fall Time, SCLK tf — — 25 ns Delay Time, SCLK Fall to SDO Active td1 — — 20 ns Delay Time, SCLK Fall to SDO Transition td2 — — 20 ns Delay Time, CS Rise to SDO Tri-state td3 — — 20 ns Setup Time, CS to SCLK Fall tsu1 25 — — ns Hold Time, CS to SCLK Rise th1 20 — — ns Setup Time, SDI to SCLK Rise tsu2 25 — — ns Hold Time, SDI to SCLK Rise th2 20 — — ns Delay Time between Chip Selects tcs 220 — — ns SDI to SDITHRU Propagation Delay td4 — 4 10 ns Note: All timing is referenced to the 50% level of the waveform. Input test levels are VIH =VDDD –0.4 V, VIL =0.4 V SCLK CS SDI th1 td3 SDO td1 td2 tsu1 tr tf tsu2 th2 tcs tc SDITHRU td4 |
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