Si3226/7

Si3208/9

4

Preliminary Rev. 0.33

1. Electrical Specifications

Parameter

Symbol

Test Condition

Value

Unit

Operating Temperature Range

–40 to 85

°C

Storage Temperature Range

–55 to 150

°C

TQFP-64

25

°C/W

TQFP-64

1.6

W

QFN-40

32

°C/W

QFN-40

1.7

W

Si3226/7

Supply Voltage

–0.5 to 4.0

V

Digital Input Voltage

–0.3 to 3.6

V

Si3208

Supply Voltage

–0.5 to 4.0

V

Continuous

+0.4 to –110

V

Pulse < 10 µs

+0.4 to –118

V

TIP, RING Current

±100

mA

Si3209

Supply Voltage

–0.5 to 4.0

V

Continuous

+0.4 to –135

V

Pulse < 10 µs

+0.4 to –143

V

TIP, RING Current

±100

mA

Notes:

1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be

restricted to the conditions as specified in the operational sections of this data sheet.

2. The thermal resistance of an exposed pad package is assured when the recommended printed circuit board layout

guidelines are followed correctly. The specified performance requires that the exposed pad be soldered to an exposed

copper surface of at least equal size and that multiple vias are added to enable heat transfer between the top-side

copper surface and a large internal/bottom copper plane.

3. Operation of the Si3226 or Si3227 above 125 °C junction temperature may degrade device reliability.

4. Si3208 and Si3209 are equipped with on-chip thermal limiting circuitry that shuts down the circuit when the junction

temperature exceeds the thermal shutdown threshold. The thermal shutdown threshold should normally be set to 145

°C; when in the ringing state the thermal shutdown may be set to 200 °C. For optimal reliability long term operation of

the Si3208/Si3209 above 150 °C junction temperature should be avoided.

5. The dv/dt of the voltage applied to the VBAT pins must be limited to 10 V/µs.