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STM32F207IE 数据表(PDF) 71 Page - STMicroelectronics |
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STM32F207IE 数据表(HTML) 71 Page - STMicroelectronics |
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71 / 163 page ![]() STM32F205xx, STM32F207xx Electrical characteristics Doc ID 15818 Rev 7 71/163 On-chip peripheral current consumption The current consumption of the on-chip peripherals is given in Table 21. The MCU is placed under the following conditions: ● At startup, all I/O pins are configured as analog inputs by firmware. ● All peripherals are disabled unless otherwise mentioned ● The given value is calculated by measuring the current consumption – with all peripherals clocked off – with one peripheral clocked on (with only the clock applied) ● The code is running from Flash memory and the Flash memory access time is equal to 3 wait states at 120 MHz ● Prefetch and Cache ON ● When the peripherals are enabled, HCLK = 120MHz, fPCLK1 = fHCLK/4, and fPCLK2 =fHCLK/2 ● The typical values are obtained for VDD = 3.3 V and TA= 25 °C, unless otherwise specified. Table 19. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ Max Unit TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.8 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_STBY Supply current in Standby mode Backup SRAM ON, RTC ON 4.8 5.2 5.8 15.1(1) 25.8(1) µA Backup SRAM OFF, RTC ON 4.2 4.5 5.1 12.4(1) 20.5(1) Backup SRAM ON, RTC OFF 2.3 2.5 3.2 12.5(1) 24.8(1) Backup SRAM OFF, RTC OFF 1.6 1.8 2.5 9.8(1) 19.2(1) 1. Based on characterization, not tested in production. Table 20. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions Typ Max Unit TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.8 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, RTC ON 3.2 3.4 3.7 12(1) 19(1) µA Backup SRAM OFF, low-speed oscillator and RTC ON 2.6 2.7 3.0 8(1) 10(1) Backup SRAM ON, RTC OFF 0.7 0.7 0.8 9(1) 16(1) Backup SRAM OFF, RTC OFF 0.1 0.1 0.1 5(1) 7(1) 1. Based on characterization, not tested in production. |
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