STM32F207IE datasheet(90/163 Pages) STMICROELECTRONICS

90 / 163 page

Electrical characteristics

STM32F205xx, STM32F207xx

90/163

Doc ID 15818 Rev 7

5.3.16

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 41 are derived from tests

performed under the conditions summarized in Table 10. All I/Os are CMOS and TTL

compliant.

Table 41.

I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level voltage

TTL ports

2.7 V

≤ VDD ≤ 3.6 V

VSS–0.3

0.8

VIH

(1)

TT(2) I/O input high level voltage

2.0

VDD+0.3

FT(3) I/O input high level voltage

2.0

5.5

VIL

Input low level voltage

CMOS ports

1.8 V

≤ VDD ≤ 3.6 V

VSS–0.3

0.3VDD

VIH

(1)

TT I/O input high level voltage

0.7VDD

-3.6(4)

FT I/O input high level voltage

-5.2(4)

CMOS ports

2.0 V

≤ VDD ≤ 3.6 V

-5.5(4)

Vhys

I/O Schmitt trigger voltage hysteresis(5)

-200

IO FT Schmitt trigger voltage

hysteresis(5)

5% VDD

(4)

Ilkg

I/O input leakage current (6)

VSS ≤ VIN ≤ VDD

±1

µA

I/O FT input leakage current (6)

VIN = 5V

RPU

Weak pull-up equivalent

resistor(7)

All pins

except for

PA10 and

PB12

VIN = VSS

PA10 and

PB12

811

RPD

Weak pull-down

equivalent resistor

All pins

except for

PA10 and

PB12

VIN = VDD

PA10 and

PB12

811

CIO

(8)

I/O pin capacitance

If VIH maximum value cannot be respected, the injection current must be limited externally to IINJ(PIN) maximum value.

TT = 3.6 V tolerant.

FT = 5 V tolerant.

With a minimum of 100 mV.

Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.

Leakage could be higher than the maximum value, if negative current is injected on adjacent pins.

Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order)

Guaranteed by design, not tested in production.

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