STM32F415VG datasheet(101/186 Pages) STMICROELECTRONICS

101 / 186 page

DocID022063 Rev 4

101/186

STM32F415xx, STM32F417xx

Electrical characteristics

Low-speed internal (LSI) RC oscillator

Figure 34. ACCLSI versus temperature

5.3.10

PLL characteristics

The parameters given in Table 35 and Table 36 are derived from tests performed under

temperature and VDD supply voltage conditions summarized in Table 14.

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

2. Based on characterization, not tested in production.

3. Guaranteed by design, not tested in production.

Table 34. LSI oscillator characteristics (1)

1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI(2)

2. Based on characterization, not tested in production.

Frequency

kHz

tsu(LSI)(3)

3. Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)(3)

LSI oscillator power consumption

0.4

0.6

µA

MS19013V1

-40

-30

-20

-10

-45

-35

-25

-15

-5

152535455565758595

105

Temperat ure (°C)

max

avg

min

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