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STM32F415VG 数据表(PDF) 105 Page - STMicroelectronics |
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STM32F415VG 数据表(HTML) 105 Page - STMicroelectronics |
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105 / 186 page  DocID022063 Rev 4 105/186 STM32F415xx, STM32F417xx Electrical characteristics Figure 36. PLL output clock waveforms in down spread mode 5.3.12 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Time ai17292 Frequency (PLL_OUT) F0 2 x md tmode 2 x tmode Table 38. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode, VDD = 1.8 V - 5 - mA Write / Erase 16-bit mode, VDD = 2.1 V - 8 - Write / Erase 32-bit mode, VDD = 3.3 V - 12 - Table 39. Flash memory programming Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Word programming time Program/erase parallelism (PSIZE) = x 8/16/32 -16 100(2) µs tERASE16KB Sector (16 KB) erase time Program/erase parallelism (PSIZE) = x 8 - 400 800 ms Program/erase parallelism (PSIZE) = x 16 - 300 600 Program/erase parallelism (PSIZE) = x 32 - 250 500 |
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