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STM32F479AI 数据表(PDF) 114 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 114 Page - STMicroelectronics |
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114 / 208 page ![]() Electrical characteristics STM32F479xx 114/208 DocID028010 Rev 2 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from www.st.com. Figure 30. Typical application with a 32.768 kHz crystal 5.3.10 Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Table 38. LSE oscillator characteristics (fLSE = 32.768 kHz)(1) 1. Guaranteed by design. Symbol Parameter Conditions Min Typ Max Unit RF Feedback resistor - - 18.4 - M Ω IDD LSE current consumption Low power mode(2) 2. LSE mode cannot be changed “on the fly” otherwise, a glitch can be generated on OSCIN pin. -- 1 µA High drive mode(2) -- 3 ACCLSE(3) 3. This parameter depends on the crystal used in the application. Refer to application note AN2867. LSE accuracy - − 500 - 500 ppm Gm_crit_max Maximum critical crystal gm Low power mode(2) - - 0.56 µA/V High drive mode(2) -- 1.5 tSU(LSE)(4) 4. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is based on characterization and not tested in production. It is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer. Startup time VDD is stabilized - 2 - s Table 39. HSI oscillator characteristics (1) Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) -- - 1 % HSI oscillator accuracy TA = –40 to 105 °C(3) − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) − 1- 1 % |
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