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STM32F479AI 数据表(PDF) 115 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 115 Page - STMicroelectronics |
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115 / 208 page ![]() DocID028010 Rev 2 115/208 STM32F479xx Electrical characteristics 187 Figure 31. HSI deviation vs. temperature 1. Based on test during characterization. tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. 2. Guaranteed by design 3. Based on test during characterization. 4. Factory calibrated, parts not soldered. Table 39. HSI oscillator characteristics (1) (continued) Symbol Parameter Conditions Min Typ Max Unit -1.5% -1.0% -0.5% 0.0% 0.5% 1.0% 1.5% -40°C 0°C 25°C 85°C 105°C TA(°C) HSI deviation versus temperature (1) Min Max Typical |
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