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STM32F479AI 数据表(PDF) 163 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 163 Page - STMicroelectronics |
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163 / 208 page  DocID028010 Rev 2 163/208 STM32F479xx Electrical characteristics 187 Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR - read timings(1) 1. Based on test during characterization. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 2THCLK − 0.5 2 THCLK+0.5 ns tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1 tw(NOE) FMC_NOE low time 2THCLK 2THCLK+ 0.5 th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 - tv(A_NE) FMC_NEx low to FMC_A valid - 2 th(A_NOE) Address hold time after FMC_NOE high 0 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 - tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 2.5 - tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK +2 - th(Data_NOE) Data hold time after FMC_NOE high 0 - th(Data_NE) Data hold time after FMC_NEx high 0 - tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0 tw(NADV) FMC_NADV low time - THCLK +1 Table 90. Asynchronous non-multiplexed SRAM/PSRAM/NOR read - NWAIT timings(1) 1. Based on test during characterization. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 7THCLK+0.5 7THCLK+1 ns tw(NOE) FMC_NWE low time 5THCLK − 1.5 5THCLK +2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+1.5 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK+1 - |
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