STM32F479AI datasheet(166/208 Pages) STMICROELECTRONICS

166 / 208 page

Electrical characteristics

STM32F479xx

166/208

DocID028010 Rev 2

Table 93. Asynchronous multiplexed PSRAM/NOR read timings(1)

1. Based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

3THCLK − 13THCLK+0.5

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

2THCLK − 0.5

2THCLK

ttw(NOE)

FMC_NOE low time

THCLK − 1THCLK+1

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

tv(A_NE)

FMC_NEx low to FMC_A valid

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

tw(NADV)

FMC_NADV low time

THCLK − 0.5

THCLK+0.5

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high)

th(A_NOE)

Address hold time after FMC_NOE high

THCLK − 0.5

th(BL_NOE)

FMC_BL time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

tsu(Data_NE)

Data to FMC_NEx high setup time

THCLK+1.5

tsu(Data_NOE)

Data to FMC_NOE high setup time

THCLK+1

th(Data_NE)

Data hold time after FMC_NEx high

th(Data_NOE)

Data hold time after FMC_NOE high

Table 94. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

1. Based on test during characterization.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

8THCLK+0.5

8THCLK+2

tw(NOE)

FMC_NWE low time

5THCLK − 15THCLK +1.5

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high

5THCLK +1.5

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid

4THCLK+1

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