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STM32F479AI 数据表(PDF) 168 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 168 Page - STMicroelectronics |
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168 / 208 page ![]() Electrical characteristics STM32F479xx 168/208 DocID028010 Rev 2 Synchronous waveforms and timings Figures 61 through 64 represent synchronous waveforms and Table 97 through Table 100 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable; • MemoryType = FMC_MemoryType_CRAM; • WriteBurst = FMC_WriteBurst_Enable; • CLKDivision = 1; • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM • CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise specified. In all timing tables, the THCLK is the HCLK clock period: • For 2.7 V≤ VDD≤ 3.6 V, maximum FMC_CLK = 90 MHz at CL = 30 pF (on FMC_CLK). • For 1.71 V≤ VDD<1.9 V, maximum FMC_CLK = 60 MHz at CL = 10 pF (on FMC_CLK). Table 96. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) 1. Based on test during characterization. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK 9THCLK+0.5 ns tw(NWE) FMC_NWE low time 7THCLK 7THCLK+2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+1.5 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK–1 - |
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