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STM32F479AI 数据表(PDF) 167 Page - STMicroelectronics |
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STM32F479AI 数据表(HTML) 167 Page - STMicroelectronics |
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167 / 208 page  DocID028010 Rev 2 167/208 STM32F479xx Electrical characteristics 187 Figure 60. Asynchronous multiplexed PSRAM/NOR write waveforms Table 95. Asynchronous multiplexed PSRAM/NOR write timings(1) 1. Based on test during characterization. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 4THCLK 4THCLK+0.5 ns tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK − 1THCLK+0.5 tw(NWE) FMC_NWE low time 2THCLK 2THCLK+0.5 th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK - tv(A_NE) FMC_NEx low to FMC_A valid - 0 tv(NADV_NE) FMC_NEx low to FMC_NADV low 0.5 1 tw(NADV) FMC_NADV low time THCLK − 0.5 THCLK+ 0.5 th(AD_NADV) FMC_AD (address) valid hold time after FMC_NADV high THCLK − 2- th(A_NWE) Address hold time after FMC_NWE high THCLK - th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK − 2- tv(BL_NE) FMC_NEx low to FMC_BL valid - 2 tv(Data_NADV) FMC_NADV high to Data valid - THCLK +1.5 th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 - |
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