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DP8390DV 数据表(PDF) 38 Page - National Semiconductor (TI) |
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DP8390DV 数据表(HTML) 38 Page - National Semiconductor (TI) |
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38 / 56 page ![]() 140 Preliminary Electrical Characteristics Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage (VCC) b 05V to a70V DC Input Voltage (VIN) b 05V to VCC a 05V DC Output Voltage (VOUT) b 05V to VCC a 05V Storage Temperature Range (TSTG) b 65 Cto a150 C Power Dissipation (PD) 500 mW Lead Temp (TL) (Soldering 10 sec) 260 C ESD rating (RZAP e 15k CZAP e 120 pF) 1600V Preliminary DC Specifications TA e 0 Cto70 C VCC e 5V g5% unless otherwise specified Symbol Parameter Conditions Min Max Units VOH Minimum High Level Output Voltage IOH eb20 mAVCC b 01 V (Notes 1 4) IOH eb20 mA 35 V VOL Minimum Low Level Output Voltage IOL e 20 mA 01 V (Notes 1 4) IOL e 20 mA 04 V VIH Minimum High Level Input Voltage 20 V (Note 2) VIH2 Minimum High Level Input Voltage 27 V for RACK WACK (Note 2) VIL Minimum Low Level Input Voltage 08 V (Note 2) VIL2 Minimum Low Level Input Voltage 06 V For RACK WACK (Note 2) IIN Input Current VI e VCC or GND b 10 a 10 m A IOZ Maximum TRI-STATE VOUT e VCC or GND b 10 a 10 m A Output Leakage Current ICC Average Supply Current TXCK e 10 MHz (Note 3) RXCK e 10 MHz BSCK e 20 MHz 40 mA IOUT e 0 mA VIN e VCC or GND Note 1 These levels are tested dynamically using a limited amount of functional test patterns please refer to AC Test Load Note 2 Limited functional test patterns are performed at these input levels The majority of functional tests are performed at levels of 0V and 3V Note 3 This is measured with a 01 mF bypass capacitor between VCC and GND Note 4 The low drive CMOS compatible VOH and VOL limits are not tested directly Detailed device characterization validates that this specification can be guaranteed by testing the high drive TTL compatible VOL and VOH specification 38 |
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