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TPS51116MPWPREP 数据表(PDF) 5 Page - Texas Instruments

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部件名 TPS51116MPWPREP
功能描述  COMPLETE DDR, DDR2, DDR3, AND LPDDR3 MEMORY POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER, 1-A LDO, BUFFERED REFERENCE
PDF  38 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TPS51116MPWPREP 数据表(HTML) 5 Page - Texas Instruments

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TPS51116-EP
www.ti.com
SLUSB52A – OCTOBER 2012 – REVISED NOVEMBER 2012
ELECTRICAL CHARACTERISTICS (continued)
TJ = −55°C to 125°C, TJ = TA, VV5IN = 5 V, VLDOIN is connected to VDDQ output (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VVLDOIN = VVDDQSNS = 2.5 V,
2.7
3.8
6.2
VVTT = VVTTSNS = 1.19 V, PGOOD = HI
IVTTTOCLSRC
Source current limit, VTT
VVLDOIN = VVDDQSNS = 2.5 V, VVTT = 0 V
1.4
2.2
3.2
A
VVLDOIN = VVDDQSNS = 2.5 V,
2.65
3.6
6
VVTT = VVTTSNS = 1.31 V, PGOOD = HI
IVTTTOCLSNK
Sink current limit, VTT
VVLDOIN = VVDDQSNS = 2.5 V, VVTT = VVDDQ
1.4
2.2
3
IVTTLK
Leakage current, VTT
VS3 = 0 V, VS5 = 5 V, VVTT = VVDDQSNS /2
-11
11
IVTTBIAS
Input bias current, VTTSNS
VS3 = 5 V, VVTTSNS = VVDDQSNS /2
-1.1
1.1
μA
IVTTSNSLK
Leakage current, VTTSNS
VS3 = 0 V, VS5 = 5 V, VVTT = VVDDQSNS /2
-1
1
IVTTDisch
Discharge current, VTT
VS3 = VS5 = VVDDQSNS = 0 V, VVTT = 0.5 V
9.5
17
mA
TRANSCONDUCTANCE AMPLIFIER
gm
Gain
232
300
364
μS
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
ICOMPSNK
COMP maximum sink current
13
VVDDQSNS = 2.7 V, VCOMP = 1.28 V
μA
COMP maximum source
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
ICOMPSRC
-13
current
VVDDQSNS = 2.3 V, VCOMP = 1.28 V
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
VCOMPHI
COMP high clamp voltage
1.3
1.34
1.38
VVDDQSNS = 2.3 V, VCS = 0 V
V
VS3 = 0 V, VS5 = 5 V, VVDDQSET = 0 V,
VCOMPLO
COMP low clamp voltage
1.17
1.21
1.25
VVDDQSNS = 2.7 V, VCS = 0 V
DUTY CONTROL
tON
Operating on-time
VIN = 12 V, VVDDQSET = 0 V
520
tON0
Startup on-time
VIN = 12 V, VVDDQSNS = 0 V
125
ns
tON(min)
Minimum on-time
TA = 25°C
100
tOFF(min)
Minimum off-time
TA = 25°C
350
ZERO CURRENT COMPARATOR
Zero current comparator
VZC
-6
0
6
mV
offset
OUTPUT DRIVERS
Source, IDRVH = –100 mA
3
6
RDRVH
DRVH resistance
Sink, IDRVH = 100 mA
0.9
3
Source, IDRVL = –100 mA
3
6
RDRVL
DRVL resistance
Sink, IDRVL = 100 mA
0.9
3
LL-low to DRVL-on
10
tD
Dead time
ns
DRVL-off to DRVH-on
20
Copyright © 2012, Texas Instruments Incorporated
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Product Folder Links: TPS51116-EP



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