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TPS51116MPWPREP 数据表(PDF) 10 Page - Texas Instruments

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部件名 TPS51116MPWPREP
功能描述  COMPLETE DDR, DDR2, DDR3, AND LPDDR3 MEMORY POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER, 1-A LDO, BUFFERED REFERENCE
PDF  38 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TPS51116MPWPREP 数据表(HTML) 10 Page - Texas Instruments

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TPS51116-EP
SLUSB52A – OCTOBER 2012 – REVISED NOVEMBER 2012
www.ti.com
DETAILED DESCRIPTION
The TPS51116 is an integrated power management solution which combines a synchronous buck controller, a
10-mA buffered reference and a high-current sink/source low-dropout linear regulator (LDO) in a small 20-pin
HTSSOP package or a 24-pin QFN package. Each of these rails generates VDDQ, VTTREF and VTT that
required with DDR/DDR2/DDR3/LPDDR3 memory systems. The switch mode power supply (SMPS) portion
employs external N-channel MOSFETs to support high current for DDR/DDR2/DDR3/LPDDR3 memory
VDD/VDDQ. The preset output voltage is selectable from 2.5 V or 1.8 V. User-defined output voltage is also
possible and can be adjustable from 0.75 V to 3 V. Input voltage range of the SMPS is 3 V to 28 V. The SMPS
runs an adaptive on-time PWM operation at high-load condition and automatically reduces frequency to keep
excellent efficiency down to several mA. Current sensing scheme uses either RDS(on) of the external rectifying
MOSFET for a low-cost, loss-less solution, or an optional sense resistor placed in series to the rectifying
MOSFET for more accurate current limit. The output of the switcher is sensed by VDDQSNS pin to generate
one-half VDDQ for the 10-mA buffered reference (VTTREF) and the VTT active termination supply. The VTT
LDO can source and sink up to 1-A peak current with only 20-
μF (two 10-μF in parallel) ceramic output
capacitors. VTTREF tracks VDDQ/2 within ±1% of VDDQ. VTT output tracks VTTREF within ±20 mV at no load
condition while ±40 mV at full load. The LDO input can be separated from VDDQ and optionally connected to a
lower voltage by using VLDOIN pin. This helps reducing power dissipation in sourcing phase. TheTPS51116 is
fully compatible to JEDEC DDR/DDR2 specifications at S3/S5 sleep state (see Table 2). The part has two
options of output discharge function when both VTT and VDDQ are disabled. The tracking discharge mode
discharges VDDQ and VTT outputs through the internal LDO transistors and then VTT output tracks half of
VDDQ voltage during discharge. The non-tracking discharge mode discharges outputs using internal discharge
MOSFETs which are connected to VDDQSNS and VTT. The current capability of these discharge FETs are
limited and discharge occurs more slowly than the tracking discharge. These discharge functions can be disabled
by selecting non-discharge mode.
VDDQ SMPS, Dual PWM Operation Modes
The main control loop of the SMPS is designed as an adaptive on-time pulse width modulation (PWM) controller.
It supports two control schemes which are a current mode and a proprietary D-CAP™ mode. D-CAP™ mode
uses internal compensation circuit and is suitable for low external component count configuration with an
appropriate amount of ESR at the output capacitor(s). Current mode control has more flexibility, using external
compensation network, and can be used to achieve stable operation with very low ESR capacitor(s) such as
ceramic or specialty polymer capacitors.
These control modes are selected by the COMP terminal connection. If the COMP pin is connected to V5IN,
TPS51116 works in the D-CAP™ mode, otherwise it works in the current mode. VDDQ output voltage is
monitored at a feedback point voltage. If VDDQSET is connected to V5IN or GND, this feedback point is the
output of the internal resistor divider inside VDDQSNS pin. If an external resistor divider is connected to
VDDQSET pin, VDDQSET pin itself becomes the feedback point (see VDDQ Output Voltage Selection section).
At the beginning of each cycle, the synchronous high-side MOSFET is turned on, or becomes ON state. This
MOSFET is turned off, or becomes OFF state, after internal one shot timer expires. This one shot is determined
by VIN and VOUT to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time
control (see PWM Frequency and Adaptive On-Time Control section). The MOSFET is turned on again when
feedback information indicates insufficient output voltage and inductor current information indicates below the
overcurrent limit. Repeating operation in this manner, the controller regulates the output voltage. The
synchronous bottom or the rectifying MOSFET is turned on each OFF state to keep the conduction loss
minimum. The rectifying MOSFET is turned off when inductor current information detects zero level. This enables
seamless transition to the reduced frequency operation at light load condition so that high efficiency is kept over
broad range of load current.
In the current mode control scheme, the transconductance amplifier generates a target current level
corresponding to the voltage difference between the feedback point and the internal 750 mV reference. During
the OFF state, the PWM comparator monitors the inductor current signal as well as this target current level, and
when the inductor current signal comes lower than the target current level, the comparator provides SET signal
to initiate the next ON state. The voltage feedback gain is adjustable outside the controller device to support
various types of output MOSFETs and capacitors. In the D-CAP™ mode, the transconductance amplifier is
disabled and the PWM comparator compares the feedback point voltage and the internal 750 mV reference
during the OFF state. When the feedback point comes lower than the reference voltage, the comparator provides
SET signal to initiate the next ON state.
10
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Links: TPS51116-EP



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