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AS4C2M32SA-7TCN 数据表(PDF) 10 Page - Alliance Semiconductor Corporation

部件名 AS4C2M32SA-7TCN
功能描述  64Mb SDRAM AS4C2M32SA - 86pin TSOP II PACKAGE
PDF  54 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS4C2M32SA-7TCN 数据表(HTML) 10 Page - Alliance Semiconductor Corporation

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Figure 9. Read to Precharge (CAS# Latency = 2, 3)
CLK
T0
T1
ADDRESS
T2
T3
T4
T5
T6
T7
T8
CAS# latency=2
tCK2, DQ
CAS# latency=3
tCK3, DQ
COMMAND
tRP
NOP
NOP
Precharge
NOP
Bank(s)
NOP
NOP
READ A
Bank,
Col A
DOUT A0 DOUT A1
DOUT A3
DOUT A2
DOUT A2
DOUT A1
DOUT A0
DOUT A3
Bank
Row
Activate
NOP
Don’t Care
5
Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the
read operation. Once this command is given, any subsequent command cannot occur within a time delay
of {tRP(min.) + burst length}. At full-page burst, only the read operation is performed in this command and
the auto precharge function is ignored.
6
Write command
(RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "L", A0-A7 = Column Address)
The Write command is used to write a burst of data on consecutive clock cycles from an active row in
an active bank. The bank must be active for at least tRCD (min.) before the Write command is issued.
During write bursts, the first valid data-in element will be registered coincident with the Write command.
Subsequent data elements will be registered on each successive positive clock edge (refer to the
following figure). The DQs remain with high-impedance at the end of the burst unless another command is
initiated. The burst length and burst sequence are determined by the mode register, which is already
programmed. A full-page burst will continue until terminated (at the end of the page it will wrap to column
0 and continue).
Figure 10. Burst Write Operation (Burst Length = 4)
CLK
DQ
T0
T1
T2
T3
T4
T5
T6
DIN A0
DIN A1
DIN A2
DIN A3
T7
T8
COMMAND
NOP
WRITE A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
The first data element and the write
are registered on the same clock edge
Don’t Care
A write burst without the auto precharge function may be interrupted by a subsequent Write,
BankPrecharge/PrechargeAll, or Read command before the end of the burst length. An interrupt coming
from Write command can occur on any clock cycle following the previous Write command (refer to the
following figure).
AS4C2M32SA-6TIN
AS4C2M32SA-6TCN
AS4C2M32SA-7TCN
Confidential
-10/54-
Rev.1.0 Sep. 2015



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