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AS4C2M32SA-7TCN 数据表(PDF) 16 Page - Alliance Semiconductor Corporation

部件名 AS4C2M32SA-7TCN
功能描述  64Mb SDRAM AS4C2M32SA - 86pin TSOP II PACKAGE
PDF  54 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS4C2M32SA-7TCN 数据表(HTML) 16 Page - Alliance Semiconductor Corporation

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Figure 16. Termination of a Burst Read Operation (Burst Length>4, CAS# Latency = 2, 3)
CLK
T0
T1
COMMAND
T2
T3
T4
T5
T6
T7
T8
CAS# latency=2
tCK2, DQ
CAS# latency=3
tCK3, DQ
The burst ends after a delay equal to the CAS# latency
NOP
NOP
READ A
DOUT A0
DOUT A0
DOUT A1
NOP
DOUT A1
DOUT A2
Burst
Stop
NOP
DOUT A3
DOUT A2
NOP
DOUT A3
NOP
NOP
Figure 17. Termination of a Burst Write Operation (Burst Length = X)
Don’t Care
CLK
DQ
T0
T1
COMMAND
T2
T3
T4
T5
T6
T7
T8
NOP
WRITE A
DIN A0
NOP
DIN A1
NOP
DIN A2
Burst
Stop
NOP
NOP
NOP
NOP
11
Device Deselect command (CS# = "H")
The Device Deselect command disables the command decoder so that the RAS#, CAS#, WE# and
Address inputs are ignored, regardless of whether the CLK is enabled. This command is similar to the
No Operation command.
12
AutoRefresh command
(RAS# = "L", CAS# = "L", WE# = "H", CKE = "H", A0-A10 = Don't care)
The AutoRefresh command is used during normal operation of the SDRAM and is analogous to
CAS#-before-RAS# (CBR) Refresh in conventional DRAMs. This command is non-persistent, so it must
be issued each time a refresh is required. The addressing is generated by the internal refresh controller.
This makes the address bits a "don't care" during an AutoRefresh command. The internal refresh
counter increments automatically on every auto refresh cycle to all of the rows. The refresh operation
must be performed 4096 times within 64ms. The time required to complete the auto refresh operation is
specified by tRC(min.). To provide the AutoRefresh command, all banks need to be in the idle state and
the device must not be in power down mode (CKE is high in the previous cycle). This command must
be followed by NOPs until the auto refresh operation is completed. The precharge time requirement,
tRP(min), must be met before successive auto refresh operations are performed.
13
SelfRefresh Entry command
(RAS# = "L", CAS# = "L", WE# = "H", CKE = "L", A0-A10 = Don't care)
The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode
for data retention and low power operation. Once the SelfRefresh command is registered, all the inputs
to the SDRAM become "don't care" with the exception of CKE, which must remain LOW. The refresh
addressing and timing is internally generated to reduce power consumption. The SDRAM may remain
in SelfRefresh mode for an indefinite period. The SelfRefresh mode is exited by restarting the external
clock and then asserting HIGH on CKE (SelfRefresh Exit command).
AS4C2M32SA-6TIN
AS4C2M32SA-6TCN
AS4C2M32SA-7TCN
Confidential
-16/54-
Rev.1.0 Sep. 2015



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