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AS4C2M32SA-7TCN 数据表(PDF) 16 Page - Alliance Semiconductor Corporation |
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AS4C2M32SA-7TCN 数据表(HTML) 16 Page - Alliance Semiconductor Corporation |
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16 / 54 page ![]() Figure 16. Termination of a Burst Read Operation (Burst Length>4, CAS# Latency = 2, 3) CLK T0 T1 COMMAND T2 T3 T4 T5 T6 T7 T8 CAS# latency=2 tCK2, DQ CAS# latency=3 tCK3, DQ The burst ends after a delay equal to the CAS# latency NOP NOP READ A DOUT A0 DOUT A0 DOUT A1 NOP DOUT A1 DOUT A2 Burst Stop NOP DOUT A3 DOUT A2 NOP DOUT A3 NOP NOP Figure 17. Termination of a Burst Write Operation (Burst Length = X) Don’t Care CLK DQ T0 T1 COMMAND T2 T3 T4 T5 T6 T7 T8 NOP WRITE A DIN A0 NOP DIN A1 NOP DIN A2 Burst Stop NOP NOP NOP NOP 11 Device Deselect command (CS# = "H") The Device Deselect command disables the command decoder so that the RAS#, CAS#, WE# and Address inputs are ignored, regardless of whether the CLK is enabled. This command is similar to the No Operation command. 12 AutoRefresh command (RAS# = "L", CAS# = "L", WE# = "H", CKE = "H", A0-A10 = Don't care) The AutoRefresh command is used during normal operation of the SDRAM and is analogous to CAS#-before-RAS# (CBR) Refresh in conventional DRAMs. This command is non-persistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "don't care" during an AutoRefresh command. The internal refresh counter increments automatically on every auto refresh cycle to all of the rows. The refresh operation must be performed 4096 times within 64ms. The time required to complete the auto refresh operation is specified by tRC(min.). To provide the AutoRefresh command, all banks need to be in the idle state and the device must not be in power down mode (CKE is high in the previous cycle). This command must be followed by NOPs until the auto refresh operation is completed. The precharge time requirement, tRP(min), must be met before successive auto refresh operations are performed. 13 SelfRefresh Entry command (RAS# = "L", CAS# = "L", WE# = "H", CKE = "L", A0-A10 = Don't care) The SelfRefresh is another refresh mode available in the SDRAM. It is the preferred refresh mode for data retention and low power operation. Once the SelfRefresh command is registered, all the inputs to the SDRAM become "don't care" with the exception of CKE, which must remain LOW. The refresh addressing and timing is internally generated to reduce power consumption. The SDRAM may remain in SelfRefresh mode for an indefinite period. The SelfRefresh mode is exited by restarting the external clock and then asserting HIGH on CKE (SelfRefresh Exit command). AS4C2M32SA-6TIN AS4C2M32SA-6TCN AS4C2M32SA-7TCN Confidential -16/54- Rev.1.0 Sep. 2015 |
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