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AS4C2M32SA-7TCN 数据表(PDF) 19 Page - Alliance Semiconductor Corporation

部件名 AS4C2M32SA-7TCN
功能描述  64Mb SDRAM AS4C2M32SA - 86pin TSOP II PACKAGE
PDF  54 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS4C2M32SA-7TCN 数据表(HTML) 19 Page - Alliance Semiconductor Corporation

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Table 14. D.C. Characteristics (VDD = 3.3V ± 0.3V, TA = -40~85°C)
Description/Test condition
Symbol
-5
-6
-7
Unit Note
Max.
Operating Current (One bank active)
tRC ≥ tRC(min), Outputs Open, Input signal one
transition per one cycle
IDD1
120
95
75
mA
3
Precharge Standby Current in non-power down mode
tCK = 15ns, CS# ≥ VIH(min), CKE ≥ VIH
Input signals are changed every 2clks
IDD2N
25
25
25
Precharge Standby Current in non-power down mode
tCK = ∞, CLK ≤ VIL(max), CKE ≥ VIH
IDD2NS
15
15
15
Precharge Standby Current in power down mode
tCK = 15ns, CKE ≤ VIL(max)
IDD2P
2
2
2
Precharge Standby Current in power down mode
tCK = ∞, CKE ≤ VIL(max)
IDD2PS
2
2
2
Active Standby Current in non-power down mode
tCK = 15ns, CKE ≥ VIH(min), CS# ≥ VIH(min)
Input signals are changed every 2clks
IDD3N
35
35
35
Active Standby Current in non-power down mode
CKE ≥ VIH(min), CLK ≤ VIL(max), tCK = ∞
IDD3NS
30
30
30
Operating Current (Burst mode)
tCK =tCK(min), Outputs Open, Multi-bank interleave
IDD4
120
100
90
3, 4
Refresh Current
tRC ≥ tRC(min)
IDD5
150
130
120
3
Self Refresh Current
CKE ≤ 0.2V ; for other inputs VIH≧VDD - 0.2V, VIL ≤ 0.2V
IDD6
2
2
2
AS4C2M32SA-6TIN
AS4C2M32SA-6TCN
AS4C2M32SA-7TCN
Confidential
-19/54-
Rev.1.0 Sep. 2015



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