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STM32L475VC 数据表(PDF) 177 Page - STMicroelectronics |
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STM32L475VC 数据表(HTML) 177 Page - STMicroelectronics |
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177 / 193 page  DocID027692 Rev 2 177/193 STM32L475xx Electrical characteristics 181 Synchronous waveforms and timings Figure 36 and Figure 37 represent synchronous waveforms and Table 94 and Table 95 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable • MemoryType = FMC_MemoryType_CRAM • WriteBurst = FMC_WriteBurst_Enable • CLKDivision = 1 • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM Table 92. Asynchronous multiplexed PSRAM/NOR write timings(1)(2) 1. CL = 30 pF. 2. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 4THCLK-0.5 4THCLK+2 ns tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK-0.5 THCLK+1 tw(NWE) FMC_NWE low time 2xTHCLK-1.5 2xTHCLK+1. 5 th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK-0.5 - tv(A_NE) FMC_NEx low to FMC_A valid - 3 tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 1 tw(NADV) FMC_NADV low time THCLK-0.5 THCLK+1 th(AD_NADV) FMC_AD(adress) valid hold time after FMC_NADV high THCLK-2 - th(A_NWE) Address hold time after FMC_NWE high THCLK-1 - th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK+0.5 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 1.5 tv(Data_NADV) FMC_NADV high to Data valid - THCLK +4 th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 - Table 93. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2) 1. CL = 30 pF. 2. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK-0.5 9THCLK+2 ns tw(NWE) FMC_NWE low time 7THCLK-1.5 7THCLK+1.5 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+2 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK-3 - |
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