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ST1S31D-R 数据表(PDF) 19 Page - STMicroelectronics

部件名 ST1S31D-R
功能描述  3 A DC step-down switching regulator
PDF  35 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST1S31D-R 数据表(HTML) 19 Page - STMicroelectronics

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DocID022998 Rev 4
19/35
ST1S31
Application information
35
In Table 8 some capacitor series are listed.
5.4
Thermal dissipation
The thermal design is important to prevent the thermal shutdown of the device if junction
temperature goes above 150 °C. The three different sources of losses within the device are:
a)
conduction losses due to the on-resistance of high-side switch (RHS) and low-side
switch (RLS); these are equal to:
Equation 24
where D is the duty cycle of the application. Note that the duty cycle is theoretically given by
the ratio between VOUT and VIN, but it is actually slightly higher to compensate the losses of
the regulator.
b)
switching losses due to high-side power MOSFET turn-on and turn-off; these can
be calculated as:
Equation 25
where TRISE and TFALL are the overlap times of the voltage across the high-side power
switch (VDS) and the current flowing into it during the turn-on and turn-off phases, as shown
in Figure 9. TSW is the equivalent switching time. For this device the typical value for the
equivalent switching time is 20 ns.
c)
Quiescent current losses, calculated as:
Equation 26
where IQ is the quiescent current (IQ = 1.2 mA maximum).
Table 8. Output capacitors
Manufacturer
Series
Cap value (
µF)
Rated voltage (V)
ESR (m
)
Murata
GRM32
22 to 100
6.3 to 25
< 5
GRM31
10 to 47
6.3 to 25
< 5
Panasonic
ECJ
10 to 22
6.3
< 5
EEFCD
10 to 68
6.3
15 to 55
Sanyo
TPA/B/C
100 to 470
4 to 16
40 to 80
TDK
C3225
22 to 100
6.3
< 5
PCOND
RHS IOUT
2 DR
LS IOUT
2
1D


+

=
PSW
VIN IOUT
TRISE TFALL
+

2
------------------------------------------- Fsw

VIN IOUT TSW FSW

==
PQ
VIN IQ
=



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