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ST1S31D-R 数据表(PDF) 19 Page - STMicroelectronics |
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ST1S31D-R 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 35 page ![]() DocID022998 Rev 4 19/35 ST1S31 Application information 35 In Table 8 some capacitor series are listed. 5.4 Thermal dissipation The thermal design is important to prevent the thermal shutdown of the device if junction temperature goes above 150 °C. The three different sources of losses within the device are: a) conduction losses due to the on-resistance of high-side switch (RHS) and low-side switch (RLS); these are equal to: Equation 24 where D is the duty cycle of the application. Note that the duty cycle is theoretically given by the ratio between VOUT and VIN, but it is actually slightly higher to compensate the losses of the regulator. b) switching losses due to high-side power MOSFET turn-on and turn-off; these can be calculated as: Equation 25 where TRISE and TFALL are the overlap times of the voltage across the high-side power switch (VDS) and the current flowing into it during the turn-on and turn-off phases, as shown in Figure 9. TSW is the equivalent switching time. For this device the typical value for the equivalent switching time is 20 ns. c) Quiescent current losses, calculated as: Equation 26 where IQ is the quiescent current (IQ = 1.2 mA maximum). Table 8. Output capacitors Manufacturer Series Cap value ( µF) Rated voltage (V) ESR (m ) Murata GRM32 22 to 100 6.3 to 25 < 5 GRM31 10 to 47 6.3 to 25 < 5 Panasonic ECJ 10 to 22 6.3 < 5 EEFCD 10 to 68 6.3 15 to 55 Sanyo TPA/B/C 100 to 470 4 to 16 40 to 80 TDK C3225 22 to 100 6.3 < 5 PCOND RHS IOUT 2 DR LS IOUT 2 1D – + = PSW VIN IOUT TRISE TFALL + 2 ------------------------------------------- Fsw VIN IOUT TSW FSW == PQ VIN IQ = |
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