STM32F078CB datasheet(52/120 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F078CB, STM32F078RB, STM32F078VB

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6.3.3

Embedded reference voltage

The parameters given in Table 25 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 23: General operating

conditions

6.3.4

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 13: Current consumption

measurement scheme

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

Table 24. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

Table 25. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage –40 °C < TA < +105 °C

1.2

1.23

1.25

tSTART

ADC_IN17 buffer startup

time

10(1)

µs

tS_vrefint

ADC sampling time when

reading the internal

reference voltage

4(1)

1. Guaranteed by design, not tested in production.

µs

∆VREFINT

Internal reference voltage

spread over the

temperature range

VDDA = 3 V

10(1)

TCoeff

Temperature coefficient

- 100(1)

100(1) ppm/°C

TVREFINT_RDY

(2)

2. Guaranteed by design, not tested in production. This parameter is the latency between the time when pin

NPOR is set to 1 by the application and the time when the VREFINTRDYF status bit is set to 1 by the

hardware.

Internal reference voltage

temporization

1.5

2.5

4.5

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