STM32F078CB datasheet(55/120 Pages) STMICROELECTRONICS

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STM32F078CB, STM32F078RB, STM32F078VB

Electrical characteristics

Table 27. Typical and maximum current consumption from the VDDA supply

Symbol

Conditions

(1)

fHCLK

VDDA = 2.4 V

VDDA = 3.6 V

Unit

Typ

Max @ TA

(2)

Typ

Max @ TA

(2)

25 °C

85 °C

105 °C

25 °C

85 °C 105 °C

IDDA

Supply

current in

Run or

Sleep

mode,

code

executing

from

Flash

memory

or RAM

HSI48

48 MHz

309

325

328

332

320

335

339

348

µA

HSE

bypass,

PLL on

48 MHz

151

169(3)

177

180(3)

163

181(3)

192

196(3)

32 MHz

103

119

124

126

112

127

133

135

24 MHz

100

105

107

HSE

bypass,

PLL off

8 MHz

1.6

2.8

3.0

3.3

2.1

3.2

3.4

3.9

1 MHz

1.6

2.8

3.0

3.3

2.0

3.2

3.4

3.9

HSI clock,

PLL on

48 MHz

217

238

249

253

238

259

272

278

32 MHz

170

189

197

200

187

205

214

218

24 MHz

146

164

170

173

162

178

186

189

HSI clock,

PLL off

8 MHz

1. Current consumption from the VDDA supply is independent of whether the digital peripherals are enabled or disabled, being

in Run or Sleep mode or executing from Flash memory or RAM. Furthermore, when the PLL is off, IDDA is independent from

the frequency.

2. Data based on characterization results, not tested in production unless otherwise specified.

3. Data based on characterization results and tested in production (using one common test limit for sum of IDD and IDDA).

Table 28. Typical and maximum current consumption from the VBAT supply

Symbol

Parameter

Conditions

Typ @ VBAT

Max(1)

Unit

TA =

25 °C

TA =

85 °C

TA =

105 °C

IDD_VBAT

RTC

domain

supply

current

LSE & RTC ON; “Xtal

mode”: lower driving

capability;

LSEDRV[1:0] = '00'

0.5

0.6

0.7

0.8

1.1

1.2

1.3

1.7

2.3

µA

LSE & RTC ON; “Xtal

mode” higher driving

capability;

LSEDRV[1:0] = '11'

0.8

0.9

1.1

1.2

1.4

1.6

1.7

2.1

2.8

1. Data based on characterization results, not tested in production.

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