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STM32F078CB 数据表(PDF) 69 Page - STMicroelectronics |
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STM32F078CB 数据表(HTML) 69 Page - STMicroelectronics |
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69 / 120 page  DocID026006 Rev 4 69/120 STM32F078CB, STM32F078RB, STM32F078VB Electrical characteristics 95 Low-speed internal (LSI) RC oscillator 6.3.8 PLL characteristics The parameters given in Table 42 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 23: General operating conditions . 6.3.9 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 41. LSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 50 kHz tsu(LSI)(2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time - - 85 µs IDDA(LSI)(2) LSI oscillator power consumption - 0.75 1.2 µA Table 42. PLL characteristics Symbol Parameter Value Unit Min Typ Max fPLL_IN PLL input clock(1) 1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the range defined by fPLL_OUT. 1(2) 8.0 24(2) MHz PLL input clock duty cycle 40(2) -60(2) % fPLL_OUT PLL multiplier output clock 16(2) -48 MHz tLOCK PLL lock time - - 200(2) 2. Guaranteed by design, not tested in production. µs JitterPLL Cycle-to-cycle jitter - - 300(2) ps Table 43. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA = - 40 to +105 °C 40 53.5 60 µs tERASE Page (2 KB) erase time TA = - 40 to +105 °C 20 - 40 ms tME Mass erase time TA = - 40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA |
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