STM32F078CB datasheet(51/120 Pages) STMICROELECTRONICS

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STM32F078CB, STM32F078RB, STM32F078VB

Electrical characteristics

6.3

Operating conditions

6.3.1

General operating conditions

6.3.2

Operating conditions at power-up / power-down

The parameters given in Table 24 are derived from tests performed under the ambient

temperature condition summarized in Table 23.

Table 23. General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK

Internal APB clock frequency

VDD

Standard operating voltage

1.65

1.95

VDDIO2

I/O supply voltage

Must not be supplied if VDD

is not present

1.65

3.6

VDDA

Analog operating voltage

(ADC and DAC not used)

Must have a potential equal

to or higher than VDD

VDD

3.6

Analog operating voltage

(ADC and DAC used)

2.4

3.6

VBAT

Backup operating voltage

1.65

3.6

VIN

I/O input voltage

TC and RST I/O

–0.3

VDDIOx+0.3

TTa and POR I/O

–0.3

VDDA+0.3(1)

FT and FTf I/O

–0.3

5.2(1)

BOOT0

5.2

Power dissipation at TA = 85 °C

for suffix 6 or TA = 105 °C for

suffix 7(2)

UFBGA100

364

LQFP100

476

LQFP64

455

LQFP48

370

UFQFPN48

625

WLCSP49

408

Ambient temperature for the

suffix 6 version

Maximum power dissipation

–40

°C

Low power dissipation(3)

–40

105

Ambient temperature for the

suffix 7 version

Maximum power dissipation

–40

105

°C

Low power dissipation(3)

–40

125

Junction temperature range

Suffix 6 version

–40

105

°C

Suffix 7 version

–40

125

1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled.

2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.7: Thermal characteristics.

3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.7:

Thermal characteristics

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