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STM32F401CD 数据表(PDF) 112 Page - STMicroelectronics |
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STM32F401CD 数据表(HTML) 112 Page - STMicroelectronics |
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112 / 135 page ![]() Electrical characteristics STM32F401xD STM32F401xE 112/135 6.3.21 Temperature sensor characteristics 6.3.22 VBAT monitoring characteristics 6.3.23 Embedded reference voltage The parameters given in Table 75 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. Table 72. Temperature sensor characteristics Symbol Parameter Min Typ Max Unit TL(1) VSENSE linearity with temperature - ±1 ±2°C Avg_Slope(1) Average slope - 2.5 - mV/°C V25(1) Voltage at 25 °C - 0.76 - V tSTART(2) Startup time - 6 10 µs TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs 1. Guaranteed by characterization, not tested in production. 2. Guaranteed by design, not tested in production. Table 73. Temperature sensor calibration values Symbol Parameter Memory address TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F Table 74. VBAT monitoring characteristics Symbol Parameter Min Typ Max Unit R Resistor bridge for VBAT -50- K Ω Q Ratio on VBAT measurement - 4 - Er(1) Error on Q –1 - +1 % TS_vbat(2)(2) ADC sampling time when reading the VBAT 1 mV accuracy 5- - µs 1. Guaranteed by design, not tested in production. 2. Shortest sampling time can be determined in the application by multiple iterations. Table 75. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) ADC sampling time when reading the internal reference voltage -10 - - µs VRERINT_s(2) Internal reference voltage spread over the temperature range VDD = 3V ± 10mV - 3 5 mV |
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