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STM32F769AI 数据表(PDF) 132 Page - STMicroelectronics

部件名 STM32F769AI
功能描述  Dual mode Quad-SPI
PDF  255 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F769AI 数据表(HTML) 132 Page - STMicroelectronics

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Electrical characteristics
STM32F765xx STM32F767xx STM32F768Ax STM32F769xx
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DocID029041 Rev 4
Table 36. Typical and maximum current consumptions in Standby mode
Symbol
Parameter
Conditions
Typ(1)
Max(2)
Unit
TA = 25 °C
TA =
25 °C
TA =
85 °C
TA =
105 °C
VDD =
1.7 V
VDD=
2.4 V
VDD =
3.3 V
VDD = 3.3 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM OFF, RTC and
LSE OFF
1.1
1.9
2.4
5(3)
18(3)
38(3)
μA
Backup SRAM ON, RTC and
LSE OFF
1.9
2.7
3.2
6(3)
23(3)
48(3)
Backup SRAM OFF, RTC ON
and LSE in low drive mode
1.7
2.7
3.5
7
26
55
Backup SRAM OFF, RTC ON
and LSE in medium low drive
mode
1.7
2.7
3.5
7
26
56
Backup SRAM OFF, RTC ON
and LSE in medium high drive
mode
1.8
2.8
3.6
8
28
57
Backup SRAM OFF, RTC ON
and LSE in high drive mode
1.9
2.9
3.7
8
28
59
Backup SRAM ON, RTC ON
and LSE in low drive mode
2.4
3.4
4.3
8
31
65
Backup SRAM ON, RTC ON
and LSE in Medium low drive
mode
2.4
3.5
4.3
8
31
65
Backup SRAM ON, RTC ON
and LSE in Medium high drive
mode
2.6
3.7
4.5
8
33
68
Backup SRAM ON, RTC ON
and LSE in High drive mode
2.6
3.7
4.5
9
33
68
1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset
OFF), the typical current consumption is reduced by additional 1.2 μA.
2. Guaranteed by characterization results, unless otherwise specified.
3. Guaranteed by test in production.



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