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STM32F769AI 数据表(PDF) 202 Page - STMicroelectronics |
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STM32F769AI 数据表(HTML) 202 Page - STMicroelectronics |
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202 / 255 page ![]() Electrical characteristics STM32F765xx STM32F767xx STM32F768Ax STM32F769xx 202/255 DocID029041 Rev 4 Synchronous waveforms and timings Figure 65 through Figure 68 represent synchronous waveforms and Table 108 through Table 111 provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable; • MemoryType = FMC_MemoryType_CRAM; • WriteBurst = FMC_WriteBurst_Enable; • CLKDivision = 1; • DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM • CL = 30 pF on data and address lines. CL = 10 pF on FMC_CLK unless otherwise specified. In all the timing tables, the THCLK is the HCLK clock period. – For 2.7 V≤ VDD≤ 3.6 V, maximum FMC_CLK = 100 MHz at CL=20 pF or 90 MHz at CL=30 pF (on FMC_CLK). – For 1.71 V≤ VDD<2.7 V, maximum FMC_CLK = 70 MHz at CL=10 pF (on FMC_CLK). 1. Guaranteed by characterization results. Table 107. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) 1. Guaranteed by characterization results. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK – 1 9THCLK + 1 ns tw(NWE) FMC_NWE low time 7THCLK – 0.5 7THCLK + 0.5 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK + 2 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK – 1 - |
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