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M69KB096AB 数据表(PDF) 1 Page - STMicroelectronics |
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M69KB096AB 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 73 page ![]() PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Rev 1 November 2005 1/73 1 M69KB096AB 64 Mbit (4 Mb x16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM Features summary ■ Supply Voltage –VCC = 1.7 to 1.95V core supply voltage –VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and Write, Page Read – Synchronous Modes: NOR-Flash, Full Synchronous (Burst Read and Write) ■ Asynchronous Random Read – Access Time: 70ns ■ Asynchronous Page Read – Page Size: 4, 8 or 16 Words – Subsequent Read Within Page: 20ns ■ Burst Read – Fixed Length (4, 8, 16 or 32 Words) or Continuous – Maximum Clock Frequency: 104MHz – Output delay: 7ns at 104MHz ■ Low Power Consumption – Active Current: < 25mA – Standby Current: 140µA – Deep Power-Down Current: < 10µA ■ Low Power Features – Partial Array Self-Refresh (PASR) – Deep Power-Down (DPD) Mode – Automatic Temperature-compensated Self- Refresh ■ Operating Temperature – –30°C to +85°C The M69KB096AB is only available as part of a multi-chip package Product. Wafer www.st.com |
类似零件编号 - M69KB096AB |
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类似说明 - M69KB096AB |
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