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AT25QL321 数据表(PDF) 63 Page - Dialog Semiconductor |
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AT25QL321 数据表(HTML) 63 Page - Dialog Semiconductor |
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63 / 79 page ![]() 62 AT25QL321 DS-25QL321–131C–5/2017 8. ElectricalCharacteristics Notes: 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. The “Absolute Maximum Ratings” are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage extremes referenced in the “Absolute Maximum Ratings” are intended to accommodate short duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended period of time. 2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU. 3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms). 8.2 Operating Ranges 8.3 Endurance and Data Retention 8.1 Absolute Maximum Ratings(1) PARAMETERS SYMBOL CONDITIONS RANGE UNIT Supply Voltage VCC ‐0.6 to VCC+0.4 V Voltage Applied to Any Pin VIO Relative to Ground -0.6 to VCC +0.4 V Transient Voltage on any Pin VIOT <20nS Transient Relative to Ground ‐1.0V to VCC +1.0V V Storage Temperature TSTG ‐65 to +150 ˚C Lead Temperature TLEAD See Note(2) ˚C Electrostatic Discharge Voltage VESD Human Body Model(3) ‐2000 to +2000 V PARAMETER SYMBOL CONDITIONS MIN MAX UNIT Erase/Program Cycles VCC FR = 104MHz (Single/Dual/Quad SPI) fR = 50MHz (Read Data 03h) 1.7 2.0 V Ambient Operating Temperature TA Industrial ‐40 +85 ˚C PARAMETER CONDITIONS MIN MAX UNIT Erase/Program Cycles 4KB Block, 32/64KB block or full chip. 100,000 Cycles Data Retention Full Temperature Range 20 years |
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