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AT25QL321 数据表(PDF) 33 Page - Dialog Semiconductor

部件名 AT25QL321
功能描述  32-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
PDF  79 Pages
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制造商  DIALOG [Dialog Semiconductor]
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AT25QL321 数据表(HTML) 33 Page - Dialog Semiconductor

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AT25QL321
DS-25QL321–131C–5/2017
7.18 32KB Block Erase (52h)
The Block Erase instruction is to erase the data of the selected block as being “1”. The instruction is used for 32K-byte
Block erase operation. Prior to the Block Erase Instruction, a Write Enable instruction must be issued. The instruction is
initiated by driving the CS pin low and shifting the instruction code “52h” followed a 24-bit block address (A23-A0).
(Please refer to Figure 7-28 and Figure 7-29). The CS pin must go high after the eighth bit of the last byte has been
latched in, otherwise, the Block Erase instruction will not be executed. After CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics).
While the Block Erase cycle is in progress, the Read Status Register instruction may still be read the status of the
BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable Latch (WEL) bit in
the Status Register is cleared to 0.
Figure 7-28. 32KB Block Erase Instruction (SPI Mode)
Figure 7-29. 32KB Block Erase Instruction (QPI Mode)



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