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ADP5075ACBZ-R7 数据表(PDF) 3 Page - Analog Devices

部件名 ADP5075ACBZ-R7
功能描述  800 mA, DC-to-DC Inverting Regulator
PDF  19 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP5075ACBZ-R7 数据表(HTML) 3 Page - Analog Devices

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Data Sheet
ADP5075
Rev. B | Page 3 of 19
SPECIFICATIONS
PVIN = AVIN = 2.85 V to 15 V, VNEG = −15 V, fSW = 1200 kHz, TJ = −40°C to +125°C for minimum/maximum specifications, and TA =
25°C for typical specifications, unless otherwise noted.
Table 2.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions/Comments
INPUT SUPPLY VOLTAGE RANGE
VIN
2.85
15
V
PVIN, AVIN
QUIESCENT CURRENT
Operating Quiescent Current
PVIN, AVIN (Total)
IQ
1.8
4.0
mA
No switching, EN = high, PVIN = AVIN =
5 V
Shutdown Current
ISHDN
5
10
µA
No switching, EN = low, PVIN = AVIN = 5 V
UVLO
System UVLO Threshold
AVIN
Rising
VUVLO_RISING
2.8
2.85
V
Falling
VUVLO_FALLING
2.5
2.55
V
Hysteresis
VHYS
0.25
V
OSCILLATOR CIRCUIT
Switching Frequency
fSW
1.130
1.200
1.270
MHz
SYNC/FREQ = low
2.240
2.400
2.560
MHz
SYNC/FREQ = high (connect to VREG)
SYNC/FREQ Input
Input Clock Range
fSYNC
1.000
2.600
MHz
Input Clock Minimum On Pulse Width
tSYNC_MIN_ON
100
ns
Input Clock Minimum Off Pulse Width
tSYNC_MIN_OFF
100
ns
Input Clock High Logic
VH (SYNC)
1.3
V
Input Clock Low Logic
VL (SYNC)
0.4
V
PRECISION ENABLING (EN)
High Level Threshold
VTH_H
1.125
1.15
1.175
V
Low Level Threshold
VTH_L
1.025
1.05
1.075
V
Shutdown Mode
VTH_S
0.4
V
Internal circuitry disabled to achieve ISHDN
Pull-Down Resistance
REN
1.48
MΩ
INTERNAL REGULATOR
VREG Output Voltage
VREG
4.25
V
INVERTING REGULATOR
Reference Voltage
VREF
1.60
V
Accuracy
−0.5
+0.5
%
TJ = 25°C
−1.5
+1.5
%
TJ = −40°C to +125°C
Feedback Voltage
VREF − VFB
0.8
V
Accuracy
−0.5
+0.5
%
TJ = 25°C
−1.5
+1.5
%
TJ = −40°C to +125°C
Feedback Bias Current
IFB
0.1
µA
Overvoltage Protection Threshold
VOV
0.74
V
At the FB pin after soft start is complete
Load Regulation
∆(VREF − VFB)/
ILOAD
0.0004
%/mA
ILOAD = 5 mA to 75 mA
Line Regulation
∆(VREF − VFB)/
VPVIN
0.003
%/V
VPVIN = 2.85 V to 14.5 V, ILOAD = 15 mA
EA Transconductance
gM
270
300
330
µA/V
Power FET On Resistance
RDS (ON)
330
mΩ
Power FET Maximum Drain Source Voltage
VDS(MAX)
39
V
Current-Limit Threshold
ILIM
800
880
960
mA
Minimum On Time
60
ns
Minimum Off Time
50
ns



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