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STM32F107VC 数据表(PDF) 47 Page - STMicroelectronics

部件名 STM32F107VC
功能描述  Connectivity line, ARM®-based 32-bit MCU with 64/256 KB Flash, USB OTG, Ethernet, 10 timers, 2 CANs, 2 ADCs, 14 communication interfaces
PDF  108 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F107VC 数据表(HTML) 47 Page - STMicroelectronics

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STM32F105xx, STM32F107xx
Electrical characteristics
107
5.3.6
External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Table 20 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 9.
APB2 (up to 72 MHz)
APB2-Bridge
3.47
µA/MHz
GPIOA
6.39
GPIOB
6.39
GPIOC
6.11
GPIOD
6.39
GPIOE
6.11
SPI1
3.61
USART1
12.08
TIM1
23.47
ADC1(4)
18.21
1. The BusMatrix is automatically active when at least one master is ON.(CPU, ETH-MAC, DMA1 or DMA2).
2. When I2S is enabled we have a consumption add equal to 0, 02 mA.
3. When DAC_OUT1 or DAC_OUT2 is enabled we have a consumption add equal to 0, 3 mA.
4. Specific conditions for measuring ADC current consumption: fHCLK = 56 MHz, fAPB1 = fHCLK/2, fAPB2 =
fHCLK, fADCCLK = fAPB2/4. When ADON bit in the ADC_CR2 register is set to 1, a current consumption of
analog part equal to 0.6 mA must be added.
Table 19. Peripheral current consumption (continued)
Peripheral
Typical consumption at 25 °C
Unit
Table 20. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE_ext
External user clock source
frequency(1)
-
18
50
MHz
VHSEH
OSC_IN input pin high level voltage
0.7VDD
-
VDD
V
VHSEL
OSC_IN input pin low level voltage
VSS
-
0.3VDD
tw(HSE)
tw(HSE)
OSC_IN high or low time(1)
1. Guaranteed by design, not tested in production.
5
-
-
ns
tr(HSE)
tf(HSE)
OSC_IN rise or fall time(1)
-
-
20
Cin(HSE) OSC_IN input capacitance(1)
-
-
5
-
pF
DuCy(HSE) Duty cycle
-
45
-
55
%
IL
OSC_IN Input leakage current
VSS ≤VIN ≤VDD
-
-
±1
µA



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