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STM32F107VC 数据表(PDF) 37 Page - STMicroelectronics |
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STM32F107VC 数据表(HTML) 37 Page - STMicroelectronics |
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37 / 108 page ![]() DocID15274 Rev 10 37/108 STM32F105xx, STM32F107xx Electrical characteristics 107 5.3 Operating conditions 5.3.1 General operating conditions Table 8. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C Table 9. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 72 MHz fPCLK1 Internal APB1 clock frequency - 0 36 fPCLK2 Internal APB2 clock frequency - 0 72 VDD Standard operating voltage - 2 3.6 V VDDA(1) 1. When the ADC is used, refer to Table 52: ADC characteristics. Analog operating voltage (ADC not used) Must be the same potential as VDD(2) 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 23.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage - 1.8 3.6 V PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(3) 3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. LFBGA100 - 500 mW LQFP100 - 434 LQFP64 - 444 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(4) 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. LQFP100 - 434 mW LQFP64 - 444 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(5) 5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(5) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 |
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