STM32F107VC datasheet(54/108 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F105xx, STM32F107xx

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DocID15274 Rev 10

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

5.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

Table 29. Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time TA = –40 to +105 °C

52.5

µs

tERASE Page (1 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Read mode

fHCLK = 72 MHz with 2 wait

states, VDD = 3.3 V

Write / Erase modes

fHCLK = 72 MHz, VDD = 3.3 V

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Table 30. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

1. Based on characterization, not tested in production.

Unit

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

Kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

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