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ADPA7009-2ACEZ-R7 数据表(PDF) 19 Page - Analog Devices

部件名 ADPA7009-2ACEZ-R7
功能描述  20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA7009-2ACEZ-R7 数据表(HTML) 19 Page - Analog Devices

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Data Sheet
ADPA7009-2
APPLICATIONS INFORMATION
analog.com
Rev. 0 | 19 of 24
The ADPA7009-2 can be biased though VGG1 and VDD1 (north
side) or VGG2 and VDD2 (south side). Figure 66 shows the primary
application circuit with north-side biasing. Figure 67 shows south-
side biasing. The RFIN and RFOUT pins are internally AC-coupled.
Because VDD1, VDD2, VGG1, and VGG2 are internally decoupled,
minimal external decoupling components are required on these
pins.
VGG1 and VGG2 are the gate bias pins for the amplifier. VDD1 and
VDD2 are the drain bias pins for the amplifier.
All measurements for this device were taken using the primary
application circuit (see Figure 66).
See the ADPA7009-2-EVALZ user guide for information on using
the evaluation board.
To avoid damaging the device, set VGG1 to −1.5 V before turning
on VDD1. VGG1 can then be adjusted upwards until the desired
IDQ is achieved. Then, apply the RF input signal. If the desired gate
voltage is known, VGG1 can be set to that voltage value directly
without taking it to the pinch off voltage (−1.5 V).
To turn off the device, turn off the RF input signal, turn off VDD1,
and then turn off VGG1.
The VDD = 5 V and IDQ = 850 mA bias conditions are recommended
to optimize overall performance. Unless otherwise noted, the data
shown was taken using the recommended bias conditions.
Operation of the ADPA7009-2 at different bias conditions may
provide performance that differs from what is shown in Table 1 to
Table 3. Biasing the ADPA7009-2 for higher drain current typically
results in higher OP1dB and gain at the expense of increased
power consumption (see Table 8).
Data for Table 8 was taken at the following nominal bias conditions:
VDD = 5 V, TCASE = 25°C, and frequency = 36 GHz.
Table 8. Power Selection
IDQ (mA)1
Gain (dB)
OP1dB (dBm)
OIP3 (dBm)
PDISS (W) at PSAT
650
18.5
26.5
38.0
3.80
750
19.0
27.0
37.0
4.08
850
19.5
27.5
34.5
4.30
950
19.7
27.8
32.5
4.49
1 Adjust VGGx from −1.5 V to 0 V to achieve the desired drain current.
Figure 66. Primary Application Circuit (North-Side Biasing)
Figure 67. Alternate Application Circuit (South-Side Biasing)



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