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M95256-DF 数据表(PDF) 31 Page - STMicroelectronics |
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M95256-DF 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 51 page ![]() Table 18. DC characteristics (M95256-DF, device grade 6) Symbol Parameter Test conditions(1) Min. Max. Unit ILI Input leakage current VIN = VSS or VCC - ± 2 µA ILO Output leakage current S = VCC, Q = VSS or VCC - ± 2 µA ICC Supply current (Read) VCC = 1.7 V, C = 0.1 VCC / 0.9 VCC, at 5 MHz, Q = open - 2 mA ICC0(2) Supply current (Write) VCC = 1.7 V, during tW, S = VCC - 3 mA ICC1 Supply current (Standby) VCC = 1.7 V, S = VCC, VIN = VSS or VCC - 1 µA VIL Input low voltage 1.7 V ≤ VCC < 2.5 V – 0.45 0.25 VCC V VIH Input high voltage 1.7 V ≤ VCC < 2.5 V 0.75 VCC VCC+1 V VOL Output low voltage IOL = 0.15 mA, VCC = 1.7 V - 0.3 V VOH Output high voltage IOH = –0.1 mA, VCC = 1.7 V 0.8 VCC - V 1. If the application uses the M95256-DF devices at 2.5 V ≤ VCC ≤ 5.5 V and –40 °C ≤ TA ≤ +85 °C, refer to Table 16. DC characteristics (M95256-W, device grade 6), rather than to the above table. 2. Evaluated By Characterization - Not tested in production. M95256-W M95256-R M95256-DF DC and AC parameters DS4712 - Rev 22 page 31/51 |
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