STM32U545NET6QTR datasheet(174/283 Pages) STMICROELECTRONICS

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IDD(SRAM2)

Supply current to be

added in Standby mode

when full SRAM2 and

BKPSRAM are retained

SMPS

1.8

0.85

2.12

6.70

14.46 29.30

2.60

6.40

21.00 44.00

88.00

µA

2.4

0.77

1.89

5.80

12.53 26.00

2.40

5.70

18.00 38.00

78.00

3.0

0.65

1.58

4.89

10.51 21.90

2.00

4.80

15.00 32.00

66.00

3.3

0.62

1.45

4.48

9.70

20.20

1.90

4.40

14.00 30.00

61.00

3.6

0.57

1.31

3.99

8.90

18.70

1.80

4.00

12.00 27.00

57.00

IDD(SRAM2_8K)

Supply current to be

added in Standby mode

when SRAM2 8-Kbyte

page 1 and BKPSRAM

are retained

1.8

0.29

0.63

1.82

3.86

7.80

0.86

1.90

5.50

12.00

24.00

2.4

0.29

0.63

1.78

3.73

7.80

0.87

1.90

5.40

12.00

24.00

3.0

0.25

0.51

1.47

3.11

6.50

0.76

1.60

4.50

9.40

20.00

3.3

0.24

0.44

1.28

2.80

5.80

0.72

1.40

3.90

8.40

18.00

3.6

0.22

0.36

0.99

2.30

5.00

0.66

1.10

3.00

6.90

15.00

1. Evaluated by characterization. Not tested in production.

2. RTC with default configuration but RTC_CALR.LPCAL = 1.

3. Current consumption with IWDG enabled is similar.

Table 67. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

-VDD (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

Table 68. Current consumption during wake-up from Standby mode

Symbol

Parameter

Conditions

Typ

Unit

-VDD (V)

25°C

QDD(wakeup from Standby)

Electrical charge consumed during wake-up from

Standby mode

Wake-up clock is MSI 4 MHz

3.0

404

nAs

Wake-up clock is MSI 1 MHz

602

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