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STM32U545NET6QTR 数据表(PDF) 177 Page - STMicroelectronics |
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STM32U545NET6QTR 数据表(HTML) 177 Page - STMicroelectronics |
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177 / 283 page ![]() IDD(VBATwith RTC) Supply current in VBAT mode (backup registers retained), RTC enabled RTC(2) clocked by LSE quartz in low-drive mode, RT C_CALR.LPCAL = 1 1.8 0.36 0.57 1.50 3.45 8.65 - - - - - µA 2.4 0.39 0.60 1.55 3.55 8.85 - - - - - 3.0 0.43 0.67 1.70 3.80 9.30 - - - - - 3.3 0.51 0.80 1.95 4.15 9.85 - - - - - 3.6 0.70 1.10 2.40 4.80 11.00 - - - - - IDD(BKPSRA M) Supply current to be added in VBAT mode when backup SRAM is retained - 1.8 0.14 0.24 0.55 1.05 2.00 0.26 0.53 1.50 3.00 5.90 2.4 0.15 0.24 0.55 1.05 2.30 0.27 0.54 1.50 3.00 6.80 3.0 0.15 0.23 0.50 1.05 2.35 0.27 0.51 1.40 3.00 6.90 3.3 0.15 0.23 0.50 1.05 2.35 0.29 0.51 1.40 3.00 6.90 3.6 0.16 0.24 0.55 1.05 2.50 0.31 0.56 1.50 3.00 7.40 1. Evaluated by characterization. Not tested in production. 2. RTC with default configuration except otherwise specified Table 71. Current consumption in VBAT mode (continued) Symbol Parameter Conditions Typ Max(1) Unit -VBAT (V) 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C |
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