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ST7FL15F1MATRE 数据表(PDF) 111 Page - STMicroelectronics |
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ST7FL15F1MATRE 数据表(HTML) 111 Page - STMicroelectronics |
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111 / 138 page ![]() ST7L15, ST7L19 111/138 ELECTRICAL CHARACTERISTICS (cont’d) 13.7 EMC CHARACTERISTICS Susceptibility tests are performed on a sample ba- sis during product characterization. 13.7.1 Functional EMS (Electro Magnetic Susceptibility) Based on a simple running application on the product (toggling two LEDs through I/O ports), the product is stressed by two electro magnetic events until a failure occurs (indicated by the LEDs). ■ ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. ■ FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4- 4 standard. A device reset allows normal operations to resume. The test results are given in the table be- low based on the EMS levels and classes defined in application note AN1709. 13.7.1.1 Designing Hardened Software to Avoid Noise Problems EMC characterization and optimization are per- formed at component level with a typical applica- tion environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore, it is recommended that EMC software optimization and prequalification tests are made relative to the EMC level requested for the user's application. Software recommendations: The software flowchart must include the manage- ment of runaway conditions such as: – Corrupted program counter – Unexpected reset – Critical data corruption (control registers...) Prequalification trials: Most of the common failures (unexpected reset and program counter corruption) can be repro- duced by manually forcing a low state on the RE- SET pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be ap- plied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to pre- vent unrecoverable errors occurring (see applica- tion note AN1015). 13.7.2 Electro Magnetic Interference (EMI) Based on a simple application running on the product (toggling two LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/ 3 which specifies the board and the loading of each pin. Notes: 1. Data based on characterization results, not tested in production. Symbol Parameter Conditions Level/ Class VFESD Voltage limits to be applied on any I/O pin to induce a function- al disturbance VDD = 5V, TA = 25°C, fOSC = 8MHz, conforms to IEC 1000-4-2 2B VFFTB Fast transient voltage burst limits to be applied through 100pF on VDD and VDD pins to induce a functional disturbance VDD = 5V, TA = 25°C, fOSC = 8MHz, conforms to IEC 1000-4-4 3B Symbol Parameter Conditions Monitored Frequency Band Max vs [fOSC/fCPU]Unit 8/4 MHz 16/8 MHz SEMI Peak level1) VDD = 5V, TA = 25°C, SO20 package, conforming to SAE J 1752/3 0.1 MHz to 30 MHz 15 20 dBµV 30 MHz to 130 MHz 17 21 130 MHz to 1 GHz 12 15 SAE EMI Level 3 - |
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