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STR910FAM32X6 数据表(PDF) 56 Page - STMicroelectronics

部件名 STR910FAM32X6
功能描述  ARM966E-S??16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
PDF  78 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STR910FAM32X6 数据表(HTML) 56 Page - STMicroelectronics

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Electrical characteristics
STR91xFA
56/78
6.11
Flash memory characteristics
VDDQ = 2.7 - 3.6V, VDD = 1.65 - 2V, TA = -40 / 85 °C unless otherwise specified.
Table 19.
Flash memory program/erase characteristics
Notes: 1 STR91xFAxx4 devices have 512 Kbytes primary Flash, STR91xFAxx2 devices have 256
Kbytes primary Flash
2VDD = 1.8V, VDDQ = 3.3V, TA = 25°C.
3 Flash read access for synchronous addresses is 96 MHz maximum.
4 Flash read access for asynchronous accesses requires 2 wait states when FMI clock is above
66 MHz. See STR91xF Flash Programming Manual for more information.
Table 20.
Flash memory endurance
Parameter
Test Conditions
Value
Unit
Typ2)
Typ after
100K W/E
cycles2)
Max
Bank erase
Primary Bank
(512 Kbytes)1)
89
11.5
s
Primary Bank
(256 Kbytes)1)
44.5
6
s
Secondary Bank
(32 Kbytes)
700
750
950
ms
Sector erase
Of Primary Bank
(64 Kbytes)
1300
1400
1800
ms
Of Secondary Bank
(8 Kbytes)
300
320
450
ms
Bank program
Primary Bank
(512 Kbytes)1)
3700
4700
5100
ms
Primary Bank
(256 Kbytes)1)
1900
2000
2550
ms
Secondary Bank
(32 Kbytes)
250
260
320
ms
Sector program
Of Primary Bank
(64 Kbytes)
500
520
640
ms
Of Secondary Bank
(8 Kbytes)
60
62
80
ms
Word program
Half word (16 bits)
8
9
11
µs
Parameter
Test Conditions
Value
Unit
Min
Typ
Max
Program/erase cycles
Per word
100K
cycles
Data retention
20
years



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