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M69KB128AA 数据表(PDF) 13 Page - STMicroelectronics

部件名 M69KB128AA
功能描述  128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
PDF  68 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M69KB128AA 数据表(HTML) 13 Page - STMicroelectronics

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M69KB128AA
3 Power-up
13/68
3
Power-up
To guarantee correct operation, a specific Power-Up sequence must be followed to initialize the
M69KB128AA. Power must be applied simultaneously to VCC and VCCQ. Once VCC and VCCQ
have reached a stable level (see Figure 35: Deep Power-Down Entry and Exit AC Waveforms
and Figure 34: Power-Up AC Waveforms), the device will require tVCHEL to complete its self-
initialization process. During the initialization period, the E signal must remain High. Once
initialization has completed, the device is ready for normal operation.
Initialization will load the Bus Configuration Register (BCR) and the Refresh Configuration
Register (RCR) with their default settings (see Table 9: Bus Configuration Register Definition,
and Table 11: Refresh Configuration Register Definition).
4
Low-power modes
4.1
Standby
When the device is in Standby, the current consumption is reduced to the level necessary to
perform the memory array refresh operation. The device will enter Standby when a read or
write operation is completed, depending on the operating mode (Asynchronous, NOR-Flash
Synchronous or Full Synchronous).
For details on how to enter Standby, refer to Table 3: Standard Asynchronous Operating
Modes, Table 5: Asynchronous Write Operations (NOR-Flash Synchronous mode) and Table 6:
Synchronous Read Operations (NOR-Flash Synchronous mode).
4.2
Deep Power-Down
Deep Power-Down (DPD) is used by the system memory microcontroller to disable the PSRAM
device when its storage capabilities are not needed. All refresh operations are then disabled.
For the device to enter Deep Power-Down, bit 4 of the RCR must be set to ‘0’ and Chip Enable,
E, must go High, VIH. When the Deep Power-Down is enabled, the data stored in the device
may be corrupted and BCR, RCR and DIDR content are saved.
To exit Deep Power-Down, the Chip Enable signal, E, must be held Low, VIL, for a minimum
time of tEHEL(DP). Bit 4 of the RCR will be automatically set to ‘1’. Once the Deep Power-Down
is exited, the device will be available for normal operations after tVCHEL (time to perform an
initialization sequence) During this delay, the current consumption will be higher than the
specified Standby levels, but considerably lower than the active current. The content of the
registers will be restored after Deep Power-Down.
For details on how to enter Deep Power-Down, refer to Table 3: Standard Asynchronous
Operating Modes, Table 5: Asynchronous Write Operations (NOR-Flash Synchronous mode)
and Table 6: Synchronous Read Operations (NOR-Flash Synchronous mode).



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