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M69KB128AA 数据表(PDF) 41 Page - STMicroelectronics

部件名 M69KB128AA
功能描述  128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
PDF  68 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M69KB128AA 数据表(HTML) 41 Page - STMicroelectronics

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M69KB128AA
9 DC and AC parameters
41/68
Table 16.
DC Characteristics
Symbol
Parameter
Refreshed
Array
Test Conditions
Min.
Typ.
Max.
Unit
VOH
(1)
1.
BCR5-BCR4 = 01 (default settings).
Output High Voltage
IOH = –0.2mA
0.8VCCQ
V
VOL
(1)
Output Low Voltage
IOL = 0.2mA
0.2VCCQ
V
VIH
(2)
2.
Input signals may overshoot to VCCQ+ 1.0V for periods of less than 2ns during transitions.
Input High Voltage
VCCQ–0.4
VCCQ +
0.2
V
VIL
(3)
3.
Output signals may undershoot to VSS – 1.0V for periods of less than 2ns during transitions.
Input Low Voltage
–0.2
0.4
V
ILI
Input Leakage Current
VIN = 0 to VCCQ
1µA
ILO
Output Leakage Current
G = VIH or E = VIH
1µA
ICC1
(4)
4.
This parameter is specified with all outputs disabled to avoid external loading effects. The user must add the current
required to drive output capacitance expected for the actual system.
Asynchronous Read/Write
Random at tRC min
VIN = 0V or VCCQ,
IOUT = 0mA, E = VIL
70ns
25
mA
85ns
22
mA
ICC2
(4)
Asynchronous Page Read
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
70ns
15
mA
85ns
12
mA
ICC3
(4)
Burst, Initial Read/Write
Access
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
104MHz
35
mA
80MHz
30
mA
66MHz
25
mA
ICC4R
(4)
Continuous Burst Read
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
104MHz
30
mA
80MHz
25
mA
66MHz
20
mA
ICC4W
(4) Continuous Burst Write
VIN = 0V or VCCQ
IOUT = 0mA, E = VIL
104MHz
35
mA
80MHz
30
mA
66MHz
25
mA
IPASR
(4)
Partial Array
Refresh Standby
Current
Full Array
VIN = 0V or VCCQ
E = VCCQ
200
µA
1/2 Array
170
µA
1/4 Array
155
µA
1/8 Array
150
µA
None
140
µA
ISB
(5)
5.
ISB maximum value is measured at +85°C with PAR set to Full Array. In order to achieve low standby current, all inputs
must be driven either to VCCQ or VSSQ. ISB might be slightly higher for up to 500ms after Power-up, or when entering
Standby mode.
Standby Current
VIN = 0V or VCCQ, E = VCCQ
200
µA
ICCPD
Deep-Power Down Current
VIN = 0V or VCCQ,
VCC, VCCQ = 1.95V; TA= +85°C
310
µA



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