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M69KB128AA 数据表(PDF) 18 Page - STMicroelectronics |
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M69KB128AA 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 68 page ![]() 6 Synchronous operating modes M69KB128AA 18/68 6 Synchronous operating modes The synchronous modes allow high-speed read and write operations synchronized with the clock. Refresh cycles are indicated to the host system by asserting the WAIT signal that, in turn, stalls the microcontroller. The M69KB128AA supports two types of synchronous modes: ● NOR-Flash:- this mode greatly simplifies the interfacing with traditional burst-mode Flash memory microcontrollers. ● Full Synchronous: both read and write are performed in Synchronous mode. All the options related to the synchronous modes can be configured through the Bus Configuration Register, BCR. In particular, the device is put in Synchronous mode, either NOR- Flash or Full Synchronous, by setting bit BCR15 of the Bus Configuration Register to ‘0’. The device will automatically detect whether the NOR-Flash or the Full Synchronous mode is being used by monitoring the Clock, K, and the Latch Enable, L, signals. If a rising edge of the Clock K is detected while L is held Low, VIL (active), the device operates in Full Synchronous mode. 6.1 NOR-Flash Synchronous mode In this mode, the device operates in synchronous mode for read operations, and in asynchronous mode for write operations. Asynchronous write operations are performed at Word level, with LB and UB Low. The data is latched on E, W, LB, UB, whichever occurs first. RCR and BCR registers can be programmed in NOR-Flash Asynchronous Write mode, using the CR controlled method (see Section 7.1: Programming the Registers by the CR controlled method). A Program Configuration Register operation can only be issued if the device is in idle state and no burst operations are in progress. NOR-Flash Asynchronous Write operations are described in Table 5: Asynchronous Write Operations (NOR-Flash Synchronous mode). Synchronous read operations are also performed at Word level. They are controlled by the state of E, L, G, W, LB and UB signals when a rising edge of the clock signal, K, occurs. The initial Burst Read access latches the Burst start address. The number of Words to be output is controlled by bits 0 to 2 of the BCR. The first data will be output after a number of clock cycles, also called Latency. NOR-Flash Synchronous Burst Read operations are described in Table 6: Synchronous Read Operations (NOR-Flash Synchronous mode). When a Burst Write operation is initiated or when switching from NOR-Flash mode to Full Synchronous mode, the delay from E Low to Clock High, tELKH, should not exceed 20ns. However, when it is not possible to meet these specifications, special care must be taken to keep addresses stable after driving the Write Enable signal, W, Low. Write operations are considered as Asynchronous operations until the device detects a valid clock edge and hence the address setup time of tAVWL must be satisfied (see Figure 5: Switching from Asynchronous to Synchronous Write operation). |
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