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STM32F103C8 数据表(PDF) 30 Page - STMicroelectronics |
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STM32F103C8 数据表(HTML) 30 Page - STMicroelectronics |
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30 / 67 page ![]() Electrical characteristics STM32F103xx 30/67 Table 12. Maximum current consumption in Stop and Standby modes(1) Symbol Parameter Conditions Typ(2) Max(3) Unit VDD/ VBAT = 2.4 V VDD/VBAT = 3.3 V TA = 85 °C TA = 105 °C IDD Supply current in Stop mode Regulator in Run mode, Low-speed and high-speed internal RC oscillators and high-speed oscillator OFF (no independent watchdog) TBD 24 TBD TBD µA Regulator in Low Power mode, Low-speed and high-speed internal RC oscillators and high-speed oscillator OFF (no independent watchdog) TBD(4) 14(4) TBD(4) TBD(4) Supply current in Standby mode(5) Low-speed internal RC oscillator and independent watchdog OFF, low- speed oscillator and RTC OFF TBD(4) 2(4) TBD(4) TBD(4) IDD_VBAT Backup domain supply current Low-speed oscillator and RTC ON 1(4) 1.4(4) TBD(4) TBD(4) 1. TBD stands for to be determined. 2. Typical values are measured at TA = 25 °C, VDD = 3.3 V, unless otherwise specified. 3. Data based on characterization results, tested in production at VDD max, fHCLK max. and TA max (for other temperature. 4. Values expected for next silicon revision. 5. To have the Standby consumption with RTC ON, add IDD_VBAT (Low-speed oscillator and RTC ON) to IDD Standby (when VDD is present the Backup Domain is powered by VDD supply). |
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