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STM32F103C8 数据表(PDF) 46 Page - STMicroelectronics |
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STM32F103C8 数据表(HTML) 46 Page - STMicroelectronics |
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46 / 67 page ![]() Electrical characteristics STM32F103xx 46/67 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 16 and Table 31, respectively. Unless otherwise specified, the parameters given in Table 31 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 7. Table 31. I/O AC characteristics(1) 1. Refer to the Reference user manual UM0306 for a description of GPIO Port configuration register. I/O mode(1) Symbol Parameter Conditions Min Max Unit 10 fmax(IO)out Maximum frequency (2) 2. The maximum frequency is defined in Figure 16. CL = 50 pF, VDD = 2 V to 3.6 V 2 MHz tf(IO)out Output high to low level fall time(3) 3. Values based on design simulation and validated on silicon, not tested in production. CL = 50 pF, VDD = 2 V to 3.6 V 125 ns tr(IO)out Output low to high level rise time(3) 125 01 fmax(IO)out Maximum frequency (2) CL = 50 pF, VDD = 2 V to 3.6 V 10 MHz tf(IO)out Output high to low level fall time(3) CL = 50 pF, VDD = 2 V to 3.6 V 25 ns tr(IO)out Output low to high level rise time(3) 25 11 Fmax(IO)out Maximum frequency (2) CL = 30 pF, VDD = 2.7 V to 3.6 V 50 MHz CL = 50 pF, VDD = 2.7 V to 3.6 V 30 MHz CL = 50 pF, VDD = 2 V to 2.7 V 20 MHz tf(IO)out Output high to low level fall time(3) CL = 30 pF, VDD = 2.7 V to 3.6 V 5 ns CL = 50 pF, VDD = 2.7 V to 3.6 V 8 CL = 50 pF, VDD = 2 V to 2.7 V 12 tr(IO)out Output low to high level rise time(3) CL = 30 pF, VDD = 2.7 V to 3.6 V 5 CL = 50 pF, VDD = 2.7 V to 3.6 V 8 CL = 50 pF, VDD = 2 V to 2.7 V 12 -tEXTIpw Pulse width of external signals detected by the EXTI controller 10 ns |
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