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STDRIVE102BH 数据表(PDF) 36 Page - STMicroelectronics

部件名 STDRIVE102BH
功能描述  Triple half-bridge gate driver with programmable currents
PDF  56 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDRIVE102BH 数据表(HTML) 36 Page - STMicroelectronics

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Referring to Table 16, the state of the functional blocks can assume three different conditions:
Active: the block is fully operative.
LOW (gate drivers only): despite the digital inputs, the drivers are set LOW and they sink current.
Therefore, the external power MOSFET is turned off regardless of the digital input applied.
Disable: the functional block is disabled.
5.6.1
Automatic re-arm using the nFAULT pin
The VDS monitoring protection and the AFE comparators protection are latched: in case one of these protections
is triggered, the device latches and it cannot operate until the FAULT condition is released.
The release condition can be forced by applying a low pulse on the EN pin. Otherwise, the latch can be released
automatically, connecting together the EN and the nFAULT pins as shown in Figure 26.
Figure 26. Automatic re-arm using EN and nFAULT pins
nFAULT
EN
GPIO
MCU
STDRIVE102
configuration
open drain
delay introduce by CENREN
time constant
EN/nFAULT
Drivers
Protection is triggered
Latch event
Gate Drivers Active
Gate Drivers Active
Gate Drivers LOW
Automatic re-arm
Vrelease
VIH
tdelay,EN
VDD
REN
CEN
When a protection is triggered, the nFAULT open-drain drives low the EN pin and its voltage falls below the
Vrelease threshold: the latch is then released. To avoid an immediate re-arm of the power stage, a delay can be
introduced using a capacitor CEN together with the pull-up resistor REN. The time required to reach the digital
threshold VIH increases, due to the smooth rising slope of the EN pin, thus delaying the re-arm of the drivers.
If a microcontroller is also connected to the EN pin, care must be taken to use an open-drain configuration for the
GPIO to avoid any conflict.
It is important to consider that the EN pin has an internal pull-down resistor RPD,EN so the voltage of the EN pin at
the end of the rising transient is:
Equation 5
VEN,ℎigℎ=VDD∙ RPD,EN
RPD,EN+REN
(5)
STDRIVE102BH, STDRIVE102H
Device description
DS14545 - Rev 1
page 36/56



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